Перегляд за автором "Belyaev, A.E."

Сортувати за: Порядок: Результатів:

  • Biomorphic SiC from peas and beans 
    Kiselov, V.S.; Yukhymchyk, V.A.; Poludin, V.I.; Tryus, M.P.; Belyaev, A.E. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2012)
    Biomorphic porous SiC ceramics produced by impregnation with liquid or vapor silicon of carbon matrices derived from peas (Pisum sativum L.) and beans (Phaseolus) precursors were investigated. Optical and scanning electron ...
  • Capacitance spectroscopy of InAs self-assembled quantum dots 
    Martin, P.M.; Belyaev, A.E.; Eaves, L.; Main, P.C.; Sheard, F.W.; Ihn, T.; Henini, M. (Semiconductor Physics Quantum Electronics & Optoelectronics, 1998)
    Capacitance spectroscopy is used to study electronic properties of self-assembled InAs quantum dots. The capacitance-voltage, C(V), measurements in combination with the magneto-capacitance, C(B), results make it possible ...
  • Carbon ceramics from plants: Graphitization of biomorphic matrixes 
    Iarmolenko, D.A.; Belyaev, A.E.; Kiselov, V.S. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2016)
    Properties of matrixes obtained from plants at various pyrolysis temperatures have been discussed. The article is devoted to graphitization of carbon matrixes obtained from plants. All stages of production, starting from ...
  • Current instabilities in resonant tunnelling diodes based on GaN/AlN heterojunctions 
    Belyaev, A.E.; Foxon, C.T.; Novikov, S.V.; Makarovsky, O.; Eaves, L.; Kappers, M.J.; Barnard, J.S.; Humphreys, C.J.; Danylyuk, S.V.; Vitusevich, S.A.; Naumov, A.V. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2004)
    Present paper studies double barrier resonant tunnelling diodes (DB-RTD) based on GaN/AlGaN heterostructures, grown by plasma-assisted molecular beam epitaxy (PA-MBE). Tunnel (current-voltage, I–V) and capacitance ...
  • Deformation state of short-period AlGaN/GaN superlattices at different well-barrier thickness ratios 
    Kladko, V.P.; Safriuk, N.V.; Stanchu, H.V.; Kuchuk, A.V.; Melnyk, V.P.; Oberemok, A.S.; Kriviy, S.B.; Maksymenko, Z.V.; Belyaev, A.E.; Yavich, B.S. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2014)
    Dependence of deformation characteristics changing in superlattice (SL) structures AlxGa₁₋xN/GaN with Al (~10%) on the well-barrier thickness ratio in period was studied in this work. The deformation state of SL and ...
  • Development of high-stable contact systems to gallium nitride microwave diodes 
    Belyaev, A.E.; Boltovets, N.S.; Ivanov, V.N.; Kapitanchuk, L.M.; Kladko, V.P.; Konakova, R.V.; Kudryk, Ya.Ya.; Kuchuk, A.V.; Lytvyn, O.S.; Milenin, V.V.; Sheremet, V.N.; Sveshnikov, Yu.N. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2007)
    High-stable heat-resistant low-resistance contact systems with diffusion barriers involving quasi-amorphous TiBx layers are suggested and studied. We have performed the structural and morphological investigations along ...
  • Effect of macrostructure on the thermoelectric properties of biomorphous SiC/Si ceramics 
    Kiselov, V.S.; Poludin, V.I.; Kiselyuk, M.P.; Kryskov, T.А.; Belyaev, A.E. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2009)
    In this work, effect of porous macrostructure on the thermoelectric properties of biomorphous SiC/Si ceramics prepared by the liquid silicon infiltration process has been investigated. Temperature dependences of the ...
  • Effect of microwave radiation on I-V curves and contact resistivity of ohmic contacts to n-GaN and n-AlN 
    Belyaev, A.E.; Boltovets, N.S.; Zhilyaev, Yu.V.; Zhigunov, V.S.; Konakova, R.V.; Panteleev, V.N.; Sachenko, A.V.; Sheremet, V.N. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2013)
    We studied ohmic contacts Au-Pd-Ti-Pd-n-AlN and Au-TiB₂-Al-Ti-n-GaN with contact resistivity ρс = 0.18cm² and 1.6 *10⁻⁴ Ω∙cm² , respectively, and the effect of microwave treatment on their electrophysical properties. ...
  • Effect of Si Infiltration Method on the Biomorphous SiC Microstructure Properties 
    Kiselov, V.S.; Kalabukhova, E.N.; Sitnikov, A.A.; Litvin, P.M.; Poludin, V.I.; Yukhymchyk, V.A.; Belyaev, A.E. (Наносистеми, наноматеріали, нанотехнології, 2009)
    Two types of wood-based biomorphous SiC composites with different microstructure are obtained by infiltration of carbon template with liquid or vapour silicon. The oak, pine, lilac, walnut, acacia woods available in ...
  • Effect of Si infiltration method on the properties of biomorphous SiC 
    Kiselov, V.S.; Kalabukhova, E.N.; Sitnikov, A.A.; Lytvyn, P.M.; Poludin, V.I.; Yukhymchuk, V.O.; Belyaev, A.E. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2009)
    Two types of wood-based biomorphous SiC composites with different microstructure were obtained by infiltration of carbon template with liquid or vapour silicon. The oak, pine, lilac, walnut, acacia woods available in ...
  • Heat-resistant barrier and ohmic contacts based on TiBx and ZrBx interstitial phases to microwave diode structures 
    Belyaev, A.E.; Boltovets, N.S.; Ivanov, V.N.; Kladko, V.P.; Konakova, R.V.; Kudryk, Ya.Ya.; Milenin, V.V.; Sheremet, V.N. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2008)
    We investigated thermal stability of Au–TiBx (ZrBx) barrier contacts, as well as ohmic contacts with a TiBx diffusion barrier to n-Si (GaAs, InP, GaP, GaN, SiC). The electrophysical measurements of Schottky barrier diodes ...
  • Investigation of luminescent properties inherent to SrTiO₃:Pr³⁺ luminophor with Al impurity 
    Marchylo, O.M.; Zavyalova, L.V.; Nakanishi, Y.; Kominami, H.; Belyaev, A.E.; Svechnikov, G.S. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2011)
    The red-emitting SrTiO₃:Pr³⁺,Al luminophors that can be used for the white light emitting diodes (LEDs) were prepared using the sol-gel method. The starting materials were SrCl₂, Ti (O – i – C₃H₇)₄, Al(NO₃)₃·9H₂O and ...
  • Investigation of resistance formation mechanisms for contacts to n-AlN and n-GaN with a high dislocation density 
    Sachenko, A.V.; Belyaev, A.E.; Boltovets, N.S.; Zhilyaev, Yu.V.; Kapitanchuk, L.M.; Klad’ko, V.P.; Konakova, R.V.; Kudryk, Ya.Ya.; Kuchuk, A.V.; Naumov, A.V.; Panteleev, V.V.; Sheremet, V.N. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2012)
    We studied temperature dependences of the resistivity, Pc(T) , of Pd-Ti-Pd-Au ohmic contacts to wide-gap semiconductors n - GaN and n - AlN with a high dislocation density. BothPc(T) curves have portions of exponential ...
  • Mechanical properties of biomorphous ceramics 
    Kiselov, V.S.; Borisov, Yu.S.; Tryus, M.; Vitusevich, S.A; Pud, S.; Belyaev, A.E. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2012)
    Mechanical properties: The Vickers hardness and bending strength of porous biomorphic SiC (bioSiC) ceramics fabricated from different natural hardwoods were investigated. It has been found that these parameters are highly ...
  • Mechanism of current flow and temperature dependence of contact resistivity in Au-Pd-Ti-Pd-n⁺ -GaN ohmic contacts 
    Sachenko, A.V.; Belyaev, A.E.; Boltovets, N.S.; Kapitanchuk, L.M.; Klad’ko, V.P.; Konakova, R.V.; Kuchuk, A.V.; Korostinskay, T.V.; Pilipchuk, A.S.; Sheremet, V.N.; Mazur, Yu.I.; Ware, M.E.; Salamo, G.J. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2013)
    We present the results of structural and morphological investigations of interactions between phases in the layers of Au-Pd-Ti-Pd-n⁺-GaN contact metallization that appear at rapid thermal annealing (RTA). It is shown that ...
  • Microwave diodes with contact metallization systems based on silicides, nitrides and borides of refractory metals 
    Boltovets, N.S.; Basanets, V.V.; Ivanov, V.N.; Krivutsa, V.A.; Tsvir, A.V.; Belyaev, A.E.; Konakova, R.V.; Lyapin, V.G.; Milenin, V.V.; Soloviev, E.A.; Venger, E.F.; Voitsikhovskyi, D.I.; Kholevchuk, V.V.; Mitin, V.F. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2000)
    We investigated the parameters of silicon and gallium arsenide microwave diodes intended for different functions. Their heat-resistant contacts were made on the base of interstitial phases. A unified technological route ...
  • Momentum relaxation of hot electrons during radiative intraband indirect transitions in ZnS:Cr 
    Vlasenko, N.A.; Belyaev, A.E.; Denisova, Z.L.; Kononets, Ya.F.; Komarov, A.V.; Veligura, L.I. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2005)
    A structureless emission in the visible region was revealed in ZnS:Cr thin-film electroluminescent structures (TFELS) apart the main near-infrared emission resulted from the 5E → 5T2 transition in the 3d shell of the Cr²⁺ ...
  • Novel technological possibilities for growth of GaAs autoepitaxial films, and properties of Gunn diodes made on their basis 
    Belyaev, A.E.; Bobyl, A.V.; Boltovets, N.S.; Ivanov, V.N.; Konakova, R.V.; Konnikov, S.G.; Kudryk, Ya.Ya.; Markovskiy, E.P.; Milenin, V.V.; Rudenko, E.M.; Tereschenko, G.F.; Ulin, V.P.; Ustinov, V.M.; Tsirlin, G.E.; Shpak, A.P. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2005)
    The n⁺-n-n⁺-n⁺⁺-GaAs epitaxial structures were MBE-grown on porous nanostructured and traditional (standard) heavily doped n⁺⁺-GaAs substrates. On their basis, we fabricated the Gunn diodes generating power output in the ...
  • Ohmic contacts based on Pd to indium phosphide Gunn diodes 
    Belyaev, A.E.; Boltovets, N.S.; Bobyl, A.V.; Zorenko, A.V.; Arsentiev, I.N.; Kladko, V.P.; Kovtonyuk, V.M.; Konakova, R.V.; Kudryk, Ya.Ya.; Sachenko, A.V.; Slipokurov, V.S.; Slepova, A.S.; Safryuk, N.V.; Gudymenko, A.I.; Shynkarenko, V.V. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2015)
    Experimental data on manufacturing the ohmic contacts Au–Ti–Pd–n⁺-InP, formed using vacuum deposition of metal onto a heated to 300 °C substrate representing an epitaxial n⁺-n-n⁺⁺-n⁺⁺⁺-InP structure. The specific contact ...
  • On a feature of temperature dependence of contact resistivity for ohmic contacts to n-Si with an n⁺ -n doping step 
    Sachenko, A.V.; Belyaev, A.E.; Boltovets, N.S.; Vinogradov, A.O.; Pilipenko, V.A.; Petlitskaya, T.V.; Anischik, V.M.; Konakova, R.V.; Korostinskaya, T.V.; Kostylyov, V.P.; Kudryk, Ya.Ya.; Lyapin, V.G.; Romanets, P.N.; Sheremet, V.N. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2014)
    We present both theoretical and experimental temperature dependences of contact resistivity ρс(Т) for ohmic contacts to the silicon n⁺ -n-structures whose n⁺ -layer was formed using phosphorus diffusion or ion implantation. ...